Proceedings of the Eighth International Conference on Defects - Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999OGAWA, Tomoya; TAJIMA, Michio.Journal of crystal growth. 2000, Vol 210, Num 1-3, issn 0022-0248, 432 p.Conference Proceedings

Lattice images of dislocations with edge components in GaN epilayers grown on Al₂O₃ substratesJUNYONG KANG; OGAWA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 157-161, issn 0022-0248Conference Paper

Influence of distributed defects on the photoelectric characteristics of a large-area deviceSOPORI, B; WEI CHEN.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 375-378, issn 0022-0248Conference Paper

TEM assessment of GaN epitaxial growthBROWN, P. D.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 143-150, issn 0022-0248Conference Paper

AFM and photoluminescence characterization of defects in the mirror-polished ZnSe bulk crystals and MBE-grown homoepitaxial layersKISHINO, M; TAGUCHI, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 230-233, issn 0022-0248Conference Paper

Effects of an inhomogeneous carrier concentration depth profile on deep-level transient spectroscopy measurementsITO, A; TOKUDA, Y.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 384-387, issn 0022-0248Conference Paper

Characterization of defects in annealed Czochralski-grown silicon wafers by photoluminescence methodYAMAMOTO, T; NISHIHARA, K.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 69-73, issn 0022-0248Conference Paper

Life cycle of grown-in defects in silicon as observed by IR-LSTKISSINGER, G; VANHELLEMONT, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 7-14, issn 0022-0248Conference Paper

Imaging of hydrogen distribution on solid surfaces by desorption spectroscopyUEDA, K.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 416-420, issn 0022-0248Conference Paper

Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuitsVAINER, B. G.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 356-360, issn 0022-0248Conference Paper

Analysis of grown-in defects in Czochralski SiITSUMI, M.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 1-6, issn 0022-0248Conference Paper

Investigations on the low-energy proton-induced defects on Ti/N-GaAs Schottky barrier diode parametersJAYAVEL, P; KUMAR, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 268-272, issn 0022-0248Conference Paper

Complex defects in electron-irradiated ZnSSHONO, Y; OKA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 278-282, issn 0022-0248Conference Paper

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscopeYAMADA, M; TAO CHU.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 102-106, issn 0022-0248Conference Paper

A quantitative approach to Makyoh (magic-mirror) topographyRIESZ, F.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 370-374, issn 0022-0248Conference Paper

Self-formation of ultra small structures on vicinal Si substrates for nano-device arrayHANAJIRI, T; SUGANO, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 85-89, issn 0022-0248Conference Paper

Nano-scale defect analysis by BEEMVON KÄNEL, H; MEYER, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 401-407, issn 0022-0248Conference Paper

Effect of C/B sequential implantation on the B acceptors in 4H-SiCNAKANO, Y; KACHI, T; TADANO, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 283-287, issn 0022-0248Conference Paper

Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometerNAKAI, K; HASEBE, M; OHTA, K et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 20-25, issn 0022-0248Conference Paper

Molecular dynamics analysis on diffusion of point defectsKAKIMOTO, K; UMEHARA, T; OZOE, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 54-59, issn 0022-0248Conference Paper

Stoichiometry and Te related defect in n-Al_0.3Ga_0.7AsMURAI, A; OYAMA, Y; NISHIZAWA, J et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 251-254, issn 0022-0248Conference Paper

The study of Pt depth profile in semiconductors using cyclotron-produced radioisotopesYAGI, T; NAGANO, A; NISHIHARA, Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 132-136, issn 0022-0248Conference Paper

Concentration of point defects changed by thermal stress in growing CZ silicon crystal : effect of the growth rateTANAHASHI, K; KIKUCHI, M; HIGASHINO, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 45-48, issn 0022-0248Conference Paper

Analysis of peculiar structural defects created in GaAs by diffusion of copperFRIGERI, C; WEYHER, J. L; MÜLLER, S et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 177-181, issn 0022-0248Conference Paper

Cleavage of thin films for X-HREM study of interface quality in heterostructuresVOROB'EV, A. B; GUTAKOVSKY, A. K; PRINZ, V. Ya et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 182-186, issn 0022-0248Conference Paper